BF556C,215 datasheet

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• Маркировка
  BF556C,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF556C,215 Configuration: Single Continuous Drain Current: 18 mA Current - Test: - Current Rating: 18mA Drain Current (idss At Vgs=0): 11 mA to 18 mA Drain Source Voltage Vds: 30 V Frequency: - Gain: - Gate-source Breakdown Voltage: - 30 V Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V ID_COMPONENTS: 3737832 Maximum Drain Gate Voltage: - 30 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SST3 (SOT-23-3) Power - Output: - Power Dissipation: 250 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel JFET Voltage - Rated: 30V Voltage - Test: - Product Category: Transistors RF JFET RoHS: yes Drain Source Voltage VDS: 30 V Gate-Source Cutoff Voltage: - 0.5 V to - 7.5 V Gate-Source Breakdown Voltage: - 30 V Drain Current (Idss at Vgs=0): 11 mA to 18 mA Factory Pack Quantity: 3000 Part # Aliases: BF556C T/R Lifecycle Status: Obsolete Alternative: PHILIPS BF556C,215,NXP BF556C,215,PHIL BF556C,215,PHILLIPS BF556C,215,PHI BF556C,215,PHILIP BF556C,215,PHILIPS/NXP BF556C,215,PHILIPS SEMICONDUCTORS BF556C,215,Philips Semiconductor BF556C,215,PHILIPS SEMI BF556C,215,PHILPS BF556C,215,PHILIPS COMPONENTS BF556C,215,NXP SEMI BF556C,215,PHL BF556C,215,NXP/PHILIPS BF556C,215,PHY BF556C,215,PHILIPS ECG BF556C,215,PHLIPS BF556C,215,ERO BF556C,215,PHILL BF556C,215,PHYC BF556C,215,PHILLIP BF556C,215,PHIL/SIG BF556C,215,PHILI BF556C,215,RFT BF556C,215,Philips Semiconductors BF556C,215 Other Names: 934021490215, BF556C T/R
• Количество страниц
  13 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  74,02 KB

BF556C,215 datasheet скачать

BF556C,215 datasheet